| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a resonant tunneling device which realizes a high P/V ratio, and to provide a semiconductor integrated circuit using the same. <P>SOLUTION: A double barrier structural part 13 of an RTD 10 is composed of a Ga<SB>0.9</SB>In<SB>0.1</SB>N<SB>0.02</SB>As<SB>0.98</SB>well layer 13, first and second AlAs barrier layers 13b, 13c sandwiching the well layer 13 from the outside, and first and second Ga<SB>0.9</SB>In<SB>0.1</SB>N<SB>0.02</SB>As<SB>0.98</SB>spacer layers 13d, 13e sandwiching the first and second AlAs barrier layers 13b, 13c from the outer side. Ga<SB>0.9</SB>In<SB>0.1</SB>N<SB>0.02</SB>As<SB>0.98</SB>used here is lattice-matched on GaAs, and moreover, the energy difference▵Ec (Γ-Γ) in comparison with the energy of GaAs at theΓpoint is large, and the energy difference▵Ec (Γ-X) in compararison with the energy of AlAs at the X point is also large. Consequently, in the the first and second AlAs barrier layers 13b, 13c, a thermally excited current passing through the X point is suppressed, thereby improving the P/V ratio of the RTD 10. <P>COPYRIGHT: (C)2004,JPO</p> |
