Production of a trench capacitor for a semiconductor memory cell comprises providing a trench in a substrate, providing a capacitor dielectric and an electrically conducting filling in trench regions, and further processing

摘要

Production of trench capacitor comprises: providing trench (5) in substrate (1) using hard masks (2,3); providing capacitor dielectric (30) and conducting filling (20) in lower and middle trench; implanting nitrogen ions in trench to change oxidation properties of partial regions of filling upper side and exposed substrate surface, and forming oxide layer on non-implanted partial regions; filling trench with conducting filling. Production of a trench capacitor in a substrate (1) comprises: (i) providing a trench (5) in the substrate using hard masks (2, 3); (ii) providing a capacitor dielectric (30) and an electrically conducting filling (20) in the lower and middle trench region; (iii) implanting nitrogen ions in the trench using the hard masks to change the oxidation properties of a partial region (200) of the upper side of the filling and a partial region of a surface region of the substrate exposed in the upper trench region; (iv) forming an oxide layer on the non-implanted partial region of the upper surface of the filling and on the non-implanted partial region of the exposed surface region of the substrate; and (v) filling the trench with a conducting filling to form a connecting region. An Independent claim is also included for an alternative process for the production of the trench capacitor in a substrate.