发明名称 Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method
摘要 A method for fabricating an acoustic resonator, for example a Thin Film Bulk Acoustic Resonators (FBAR), on a substrate. A depression is etched and filled with sacrificial material. The FBAR is fabricated on the substrate spanning the depression, the FBAR having an etch hole. The depression may include etch channels in which case the FBAR may include etch holes aligned with the etch channels. A resonator resulting from the application of the technique is suspended in air and includes at least one etch hole and may include etch channels.
申请公布号 US6714102(B2) 申请公布日期 2004.03.30
申请号 US20010798496 申请日期 2001.03.01
申请人 AGILENT TECHNOLOGIES, INC. 发明人 RUBY RICHARD C.;BRADLEY PAUL;OSHMYANSKY YURY;FIGUEREDO DOMINGO A.
分类号 H01L41/08;H01L41/22;H03H3/02;H03H9/17;(IPC1-7):H03H9/00;E04B1/82;H01L41/04 主分类号 H01L41/08
代理机构 代理人
主权项
地址