Semiconductor memory with vertical memory transistors in a cell field arrangement with 1-2f2 cells,申请号AU20030264084-传众专利搜索

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发明名称	Semiconductor memory with vertical memory transistors in a cell field arrangement with 1-2f2 cells
摘要
申请公布号	AU2003264084(A8)	申请公布日期	2004.03.29
申请号	AU20030264084	申请日期	2003.08.21
申请人	INFINEON TECHNOLOGIES AG	发明人	ERHARD LANDGRAF;THOMAS SCHULZ;MICHAEL SPECHT;FRANZ HOFMANN;RICHARD JOHANNES LUYKEN
分类号	H01L21/20;H01L21/28;H01L21/336;H01L21/8246;H01L27/10;H01L27/115;H01L29/73;H01L29/76;H01L29/792;(IPC1-7):H01L27/115;H01L21/824	主分类号	H01L21/20
代理机构		代理人
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