| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which assures a sufficient breakdown voltage and suppresses ON resistance in a MOSFET while the gate capacitance is reduced to increase switching speed, and low power consumption is realized. SOLUTION: The semiconductor device, according to an embodiment, has a gate electrode which is formed on a semiconductor substrate via a gate insulating film, and which has a gap portion or a slit portion; side wall films formed at both side faces of the gate electrode and at side walls of the slit portion, and which fill an interior of the slit portion and cover the gate insulating film directly beneath the slit portion; and an interlayer insulating film formed to cover the gate electrode and the side wall films. COPYRIGHT: (C)2004,JPO |
