| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing such a light emitting diode that has the directivity of light emitted in the direction of the top. <P>SOLUTION: A V groove 11 is formed around light emitting layers 4 and 5 by applying mesa etching to a position deeper than the light emitting layers 4 and 5 of a semiconductor layer, and a reflection layer 12 made of gold is formed on a side surface facing the light emitting layers 4 and 5 on the upper surface of the V groove 11, and then the surface of a semiconductor layer 6 is annealed to form a protection film 9. <P>COPYRIGHT: (C)2004,JPO |
