| 摘要 |
PROBLEM TO BE SOLVED: To prevent production of a void at low temperature and degrading in the quality caused by the void, by forming a thermal buffer film on a substrate. SOLUTION: A thermal buffer film 2 comprising an acrylic resin or a polyimide resin as a flattening film material having excellent transmittance is formed on one surface of a substrate 1, and a pixel electrode such as ITO having excellent transmittance is formed on the thermal buffer film 2. A light shielding film 52 and a counter electrode 53 made of ITO having excellent transmittance are formed on a substrate 51. Alignment films 4, 54 are applied on the substrates 1, 51, respectively. A first gap holding material 5 is formed on the alignment film 4 corresponding to the gate line on a gate PS layer 12, while a second gap holding material 6 is formed on the alignment film 4 corresponding to the source line on an AL layer 13. The substrate 1 and the substrate 51 are disposed with the alignment films 4, 54 opposed to each other, and the gap is filled with a liquid crystal to form a liquid crystal layer 9. COPYRIGHT: (C)2004,JPO
|
