发明名称 Method and apparatus for two-step barrier layer polishing
摘要 A method and composition for planarizing a substrate surface having a barrier layer disposed thereon. In one aspect, the invention provides for planarizing a substrate surface having a barrier layer and a copper containing material disposed thereon including chemical mechanical polishing the substrate to selectively remove excess copper containing material, chemical mechanical polishing the substrate to selectively remove residual copper containing material and a portion of the barrier layer, and chemical mechanical polishing the substrate to selectively remove residual barrier layer.
申请公布号 US6709316(B1) 申请公布日期 2004.03.23
申请号 US20000698864 申请日期 2000.10.27
申请人 APPLIED MATERIALS, INC. 发明人 SUN LIZHONG;TSAI STAN;LI SHIJIAN
分类号 C09G1/02;H01L21/321;H01L21/768;(IPC1-7):B24B7/00 主分类号 C09G1/02
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