| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride-based semiconductor light emitting device for emission in the range of blue to green having a double hetero-structure including a light emitting layer high in indium composition and excellent in crystallinity. SOLUTION: The MOCVD method is applied in the first growth process using hydrogen gas as the carrier gas and NH<SB>3</SB>gas as the nitrogen source, and, at approximately 1,000°C, an n-GaN buffer layer 14, an n-Al<SB>0.08</SB>Ga<SB>0.92</SB>N cladding layer 16, and an n-GaN guide layer 18 are grown, in this order, on an n-GaN substrate 12. In the second growth process, the carrier gas is changed to nitrogen gas and the temperature is decreased to 700°C, and an n-In<SB>0.02</SB>Ga<SB>0.98</SB>N/n-In<SB>0.2</SB>Ga<SB>0.8</SB>N/n-In<SB>0.02</SB>Ga<SB>0.98</SB>N MQW active layer 20 is grown. In the third growth process, the carrier gas is changed to hydrogen gas and, simultaneously, the feed of NH<SB>3</SB>gas is stopped, and the temperature is increased to 800°C while dimethyl hydrazine is fed as the nitrogen source. In this process, a p-GaN guide layer 22, a p-Al<SB>0.07</SB>Ga<SB>0.93</SB>N cladding layer 24, and a p-GaN contact layer 26 are grown, in this order. COPYRIGHT: (C)2004,JPO
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