| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light-emitting element which improves emission efficiency and has low threshold current density. <P>SOLUTION: The nitride semiconductor light-emitting element is provided with a light guide layer 14 of n-type GaN, a light-emitting layer 15 and a carrier block layer 16 of p-type AlGaN. The light-emitting layer 15 has a structure, wherein a barrier layer 30a, a well layer 31, a barrier layer 30b, a well layer 31, a barrier layer 30b, a well layer 31 and a barrier layer 30c are stacked in this order. The well layer 31 is an InGaN layer, without being doped with impurities. At least the barrier layer 30b sandwiched between the well layers 31 includes an InGaN layer 33b, having an In composition ratio different from that of the well layer 31 and includes a GaN layer 32b, with the InGaN layer 33b in contact with one well layer 31 and the GaN layer 32b in contact with the other well layer 31. <P>COPYRIGHT: (C)2004,JPO |
