METHOD FOR FORMING DAMASCENE INTERCONNECTION USING TWO-STEP PLATING

摘要

PURPOSE: A method for forming a damascene interconnection is provided to be capable of obtaining a metal interconnection with high reliability and low resistivity without forming voids. CONSTITUTION: An interlayer dielectric(105) is formed on a substrate(100). A deep first opening part(150) and a shallow second opening part(160) are formed by selectively etching the interlayer dielectric. A barrier metal film(170) and a seed layer(180) are sequentially formed on the resultant structure. The first plating film(190) is formed in the first opening part and annealed. The second plating film is formed in the second opening part. The resultant structure is then planarized to expose the interlayer dielectric.