METHOD FOR FORMING INSULATING LAYER OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming an insulating layer of a semiconductor device is provided to improve gap-filling property and to prevent attack of fluorine ions by forming the insulating layer using NF3. CONSTITUTION: A diffusion barrier layer(220) is formed on a semiconductor substrate(200) for preventing attacks of impurities into the substrate. An insulating layer is then formed on the diffusion barrier layer by using fluorine containing gas, such as NF3. At the time, a thermal oxide layer is used as the diffusion barrier layer(220).