| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing an annealed wafer for manufacturing a high-quality annealed wafer in which crystal defects do not exist in the silicon wafer and boron concentration is constant yielding uniform specific resistivity, for giving high heat treatment efficiency, and for reducing the manufacturing cost. SOLUTION: The method contains a first heat treatment step in which a silicon wafer is preheated at approximately 500°C in a heat treatment furnace of a gas atmosphere of any one of argon gas, nitrogen gas, or an inert gas containing these, a second heat treatment step in which the wafer is heat treated by changing the gas atmosphere in the heat treatment furnace to 100% hydrogen gas atmosphere to remove adsorbed boron on the surface of the silicon wafer while raising the temperature to a constant temperature of approximately 850°C to 1150°C, a third heat treatment step in which the gas atmosphere in the heat treatment furnace to 100% argon atmosphere, and after the temperature is raised to approximately 1200°C, the wafer is heat treated keeping the temperature at that value for approximately 1 hour, and a temperature lowering step in which the temperature in the heat treatment furnace is lowered down to approximately 500°C or lower. COPYRIGHT: (C)2004,JPO
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