| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor device that has a trench gate structure and is improved in throughput and reduced in cost by suppressing the fluctuation of the electric characteristics of the device caused by the worked shape of the device, and to provide a method of manufacturing the device. SOLUTION: The depth d20 of the peak 20 of the impurity concentration in the p-well region 3 of this semiconductor device which is an essential element for deciding the electrical characteristics of the device is made deeper than that d11 of the n<SP>+</SP>-type source region 11 of the device. In addition, the depth d20 is set to≥1/3 as deep as the depth of a trench or to≥1μm from the surface of a semiconductor. COPYRIGHT: (C)2004,JPO
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