发明名称 Method for manufacturing a spin valve having an enhanced free layer
摘要 A spin valve sensor is provided with a negative ferromagnetic coupling field -HFC for properly biasing a free layer and a spin filter layer is employed between the free layer and a capping layer for increasing the magnetoresistive coefficient dr/R of the spin valve sensor. A top portion of the free layer is oxidized for improving the negative ferromagnetic coupling field -HFC when the spin filter layer is employed for increasing the magnetoresistive coefficient dr/R.
申请公布号 US2004034991(A1) 申请公布日期 2004.02.26
申请号 US20030611624 申请日期 2003.06.30
申请人 HITACHI GLOBAL STORAGE TECH 发明人 PINARBASI MUSTAFA
分类号 G11B5/39;H01F10/32;H01L43/08;(IPC1-7):G11B5/127;G11B5/33 主分类号 G11B5/39
代理机构 代理人
主权项
地址