| 摘要 |
A capacitor for a semiconductor device is disclosed with increased capacitance which is produced by a simplified manufacturing process. The capacitor has a storage node electrode structure formed on the semiconductor device having impurity regions formed therein. The storage node electrode structure includes a buried layer formed in a storage node hole defined by the semiconductor device, the buried layer being in contact with at least one impurity region, a bottom layer formed on the buried layer and extending beyond the buried layer, a first cylindrical electrode having first walls upwardly extending from the bottom layer, and second cylindrical electrodes having second walls upwardly extending from the bottom layer and disposed on outer sides of the first cylindrical electrode.
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