| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a CMP slurry for an oxide film whose selection ratio for each layer is similar, and to provide a metal wiring contact plug formation method for a semiconductor device that forms a safe plug by using the CMP slurry for the oxide film. <P>SOLUTION: With respect to chemical mechanical polishing slurry for an oxide film and the metal wiring contact plug formation method, when polishing a multilayer film by using the CMP slurry for the oxide film containing, to be in more detail, a composition having a structure of HXO<SB>n</SB>(at this time, n is an integer of 1 to 4), the metal wiring contact plug formation method for the semiconductor device can reduce a difference of an inter-layer polishing speed to prevent a level difference, thus forming a stable landing plug poly. <P>COPYRIGHT: (C)2004,JPO |
