| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an abrasive composition for CMP process of a semiconductor device having a copper film and a tantalum compound, having high selectivity to have high abrasion rate of copper and small abrasion rate of the tantalum compound and giving a smooth surface of the copper film. <P>SOLUTION: The abrasive composition is composed of (A) 1-30 wt.% abrasive composed of an organic polymer compound having an average particle diameter of 5-500 nm and a water absorption of 0.10-2.0% after 24 hr at 23°C, (B) 0.01-5 wt.% antioxidant composed of benzotriazole or its derivative, (C) 0.01-5 wt.% one or more organic acids selected from oxalic acid, succinic acid, citric acid, tartaric acid, malic acid, lactic acid and amino acid and (D) 0.03-5 wt.% hydrogen peroxide. <P>COPYRIGHT: (C)2004,JPO</p> |
