发明名称 |
Semiconductor element and semiconductor device using the same |
摘要 |
A semiconductor element with high current drive capability, capable of high-speed operation, and having little variation in pluralities of semiconductor elements is provided. It is characterized by the fact that semiconductor elements have a first crystalline semiconductor region including pluralities of crystal orientations, and the first crystalline semiconductor region being connected to a second crystalline semiconductor region which is conductive, wherein the first crystalline semiconductor region is extended in the direction parallel to the insulating film which extends in linear-shaped stripe pattern on the insulating surface, and the second crystalline semiconductor region is provided ranging over the insulating film which extends in linear-shaped stripe pattern. |
申请公布号 |
US2004026696(A1) |
申请公布日期 |
2004.02.12 |
申请号 |
US20030377725 |
申请日期 |
2003.07.17 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;KATO KIYOSHI;ISOBE ATSUO;MIYAIRI HIDEKAZU;SUZAWA HIDEOMI |
分类号 |
H01L21/20;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/49;H01L29/786;(IPC1-7):H01L29/76;H01L31/036;H01L31/112 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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