| 摘要 |
PROBLEM TO BE SOLVED: To realize high densification and high integration of ferrodielectric memory by realizing a ferrodielectric memory cell, which stores multi-values of three-values or more of polarized data in one set of ferrodielectric element. SOLUTION: The semiconductor memory device moves the position of an atom B relative to an atom A or an atom O and stores data as a residual polarization at a stabilized point, by controlling an impressing electric field on a ferrodielectric element 90, employing a ferrodielectric material having an ABO<SB>3</SB>base crystal structure, consisting of at least the atom A, the atom B and the atom O or an ABO<SB>3</SB>-based perovskite structure. In such a semiconductor memory device, the atom B stores 2 bits of information at a total 4 point of positions in one ferrodielectric element or at 2 points at both ends in a first direction and 2 points at both ends of a second direction perpendicular to the first direction. COPYRIGHT: (C)2004,JPO
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