| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin-film forming apparatus for inhibiting staining of a discharge face of an electrode, which occurs when a substrate is arranged between the counter electrodes in an atmospheric pressure or a pressure around it, a high frequency voltage is applied in a reactant gas atmosphere, and plasma discharge treatment is performed. <P>SOLUTION: This thin-film forming apparatus comprises a discharge space in which a first electrode and a second electrode are arranged so as to face each other, a voltage application means for applying voltage to the above first electrode and the second electrode, and a gas supply means for supplying a discharge gas and a reactive gas respectively and individually to the above discharge space; and forms a film on a substrate arranged on the above second electrode, by applying voltage with the above voltage application means in the atmospheric pressure or the pressure around it, and thereby activating the reactive gas supplied to the above discharge space. The above gas supply means comprises supplying the gas to the above discharge space so as to make a layer of the above discharge gas in a region contacting with at least the above first electrode in the above discharge space and further so as to make velocity V1 of the above reactive gas and velocity V2 of the above discharge gas to each 20 m/sec or less. <P>COPYRIGHT: (C)2004,JPO |
