| 摘要 |
<P>PROBLEM TO BE SOLVED: To eliminate the unevenness of the inductance of a bonding wire and to enable a semiconductor device to be reduced in size. <P>SOLUTION: A pad 3 for a gate electrode electrically connected to a gate electrode of a MOSFET, and a pad 4 for a drain electrode electrically connected to the drain electrode, are aligned on one row and disposed on the surface of the semiconductor device 1, in which the MOSFET made of a plurality of unit MOSFETs connected in parallel are formed on a MOSFET forming region 2. An interval of the pads 3 for the gate electrodes is gradually narrowed from both ends of an electrode row 3a of the pads 3 for the gate electrodes toward a central part. An interval of the pads 4 for the drain electrodes is gradually narrowed as well from both ends of the electrode row 4a of the pads 4 for the drain electrodes toward the central part. <P>COPYRIGHT: (C)2004,JPO |
