| 摘要 |
PROBLEM TO BE SOLVED: To accelerate the speed of the operation of a MOSFET by improving the moving speed of a carrier at a source end. SOLUTION: This field effect transistor comprises a distorted SiGe layer 20 formed on an embedded insulation film 12, a gate electrode 32 formed on the SiGe layer 20 via a gate oxide film 31, and source and drain regions 34, 35 formed by doping a p-type impurity to the SiGe layer 20 on both sides of a gate electrode 32. In the field effect transistor, the Ge composition of a channel region of the SiGe layer 20 is set to 0.35 in maximum at an area near the center of the gate and to 0.065 in minimum at the source and drain regions 34, 35. COPYRIGHT: (C)2004,JPO
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