发明名称 |
De novo processing of electronic materials |
摘要 |
Computer programs and computer-implemented methods for predicting from first principles the behavior of dopants and defects in the processing of electronic materials. The distribution of dopant and defect components in a substrate lattice is predicted based on external conditions and fundamental data for a set of microscopic processes that can occur during material processing operations. The concentration behavior of one or more fast components is calculated in two stages, by solving a first relationship for a time period before the fast component reaches a pseudo steady state at which the concentration of the fast component is determined by concentrations of one or more second components, and by solving a second relationship for a time period after the first component reaches the pseudo steady state. Application of these methods to modeling ultrashallow junction processing is also described.
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申请公布号 |
US6685772(B2) |
申请公布日期 |
2004.02.03 |
申请号 |
US20020113919 |
申请日期 |
2002.03.28 |
申请人 |
CALIFORNIA INSTITUTE OF TECHNOLOGY |
发明人 |
GODDARD, III WILLIAM A.;HWANG GYEONG S. |
分类号 |
G06F17/50;(IPC1-7):C30B1/10 |
主分类号 |
G06F17/50 |
代理机构 |
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