发明名称 Nonvolatile semiconductor memory and method of operating the same
摘要 A first decision process, which reads data from a memory cell under a first deciding condition to decide pass/fail and applies a signal to the memory cell to change an amount of charge stored in the memory cell if the data is decided as fail, and a second decision process, which reads the data from the memory cell under a second deciding condition that is relaxed rather than the first deciding condition to decide the pass/fail, are executed, and then the processes are repeated from the first decision process when the data is decided as fail in the second decision process.
申请公布号 US2004013000(A1) 申请公布日期 2004.01.22
申请号 US20030618712 申请日期 2003.07.15
申请人 FUJITSU LIMITED 发明人 TORII SATOSHI
分类号 G11C16/02;G11C16/00;G11C16/04;G11C16/06;G11C16/34;G11C29/56;(IPC1-7):G11C16/06 主分类号 G11C16/02
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