| 发明名称 |
Solvent free photoresist strip and residue removal processing for post etching of low-k films |
| 摘要 |
A photoresist or a residue of the photoresist may by removed by the hydrogen and water plasma mixture. The process may be performed at a temperature range between about 150° C. and about 450° C., preferably about 250° C., and a power range between about 500 W and about 3000 W, preferably about 1400 W.
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| 申请公布号 |
US6680164(B2) |
申请公布日期 |
2004.01.20 |
| 申请号 |
US20010006563 |
申请日期 |
2001.11.30 |
| 申请人 |
APPLIED MATERIALS INC. |
发明人 |
NGUYEN HUONG THANH;KAWAGUCHI MARK NAOSHI;NAIK MEHUL B.;XIA LI-QUN;YIEH ELLIE |
| 分类号 |
G03F7/42;H01L21/311;(IPC1-7):G03F7/42 |
主分类号 |
G03F7/42 |
| 代理机构 |
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