| 摘要 |
A semiconductor laser capable of emitting a plurality of laser light having different oscillation wavelengths which is formed with dielectric films having little fluctuation in reflectance at ends of a plurality of active layers and a method of production of the same, said semiconductor laser having a plurality of active layers having different compositions on a substrate and emitting in parallel a plurality of laser light having different oscillation wavelengths, wherein a front dielectric film having a predetermined thickness by which a reflectance with respect to light of a predetermined wavelength of an arithmetical mean of oscillation wavelengths becomes the extremal value is formed on an end of the laser emission side, while rear dielectric films having higher reflectances compared with the front dielectric film and having predetermined thicknesses by which reflectances with respect to light having a predetermined wavelength become the extremal values are formed on the end of the rear side, and a method of producing the same.
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