METHOD FOR FABRICATING SILICON OXIDE LAYER BY ATOMIC LAYER DEPOSITION METHOD

摘要

PURPOSE: A method for fabricating a silicon oxide layer by an atomic layer deposition(ALD) method is provided to increase the deposition rate of a silicon oxide layer while improving the quality of a layer by using a new silicon source and/or catalyst. CONSTITUTION: The first reactant of halogenated silicon including at least two silicon atoms is supplied to a substrate to which a hydroxy radical is coupled together with the first base catalyst so that a chemisorbed layer of the first reactant is formed on the substrate(132). The second reactant containing O and H is supplied to the chemisorbed layer together with the second base catalyst so that the chemisorbed layer of the first reactant chemically reacts with the second reactant(136).