| 摘要 |
<P>PROBLEM TO BE SOLVED: To realize a semiconductor light emitting device whose external quantum efficiency is higher than that of a conventional LED, and whose production costs are less than those of a conventional semiconductor laser. <P>SOLUTION: A translucent insulating coating 110F2 is formed on a series of inclined faces consisting of the respective side walls of semiconductor layers 106 to 109 etched so as to be V-shaped at a right-angled aperature angle. The V-shaped inclined faces are formed by an already known etching method, and both the right and left inclined faces are applied with an angle of inclination of 45°. Also, probability that the light under resonance is reflected (stimulatedly emitted) is made optimal or preferable based on length δ of a light reflecting part or the position of the light reflecting part in the resonance directions. Thus, it is not necessary to carry out high level, highly precise, or expensive working processing such as, for example, multilayer film coating to the edge face of the resonance direction. Therefore, it is possible to configure the semiconductor light emitting element having a resonating mechanism such as a resonator without forming an expensive edge face. <P>COPYRIGHT: (C)2004,JPO |
