发明名称 PLASMA GENERATION DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a device for generating stable plasma provided with a negative electrode having an excellent field emission characteristic and a long service life so as to enhance plasma density to increase throughput. <P>SOLUTION: This plasma generation device has a plasma chamber surrounded by walls and used for turning a material gas into plasma. The plasma chamber comprises: the negative electrode; a positive electrode; an introduction means of the material gas; and an exhaust means. The device is characterized by forming carbon nanotubes on one surface of the negative electrode, and by installing the positive electrode on that surface side of the negative electrode. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004006283(A) 申请公布日期 2004.01.08
申请号 JP20030087725 申请日期 2003.03.27
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 NAKAMURA OSAMU
分类号 H05H1/46;B01J19/08;C23C14/48;H01J27/08;H01J37/08;H01L21/265 主分类号 H05H1/46
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