| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to improve processing reliability in high integrated semiconductor device. CONSTITUTION: An interlayer dielectric(22) is formed on a semiconductor substrate(20). A capacitor insulating layer(24) is formed on the interlayer dielectric(22). A hard mask pattern(25) having a trapezoid shape is formed on the capacitor insulating layer. A capacitor hole(27) is then formed by selectively etching the capacitor insulating layer(24) using the hard mask pattern(25) as an etch barrier. A lower electrode is formed in the capacitor hole. Then, a dielectric film and an upper electrode are sequentially formed on the lower electrode.
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