METHOD FOR DETECTING UNOPENED CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for detecting an unopened contact hole of a semiconductor device is provided to improve yield and reliability by using a contact buried layer in a contact hole such that the contact buried layer has etch selectivity regarding an oxide layer while using conventional detecting equipment. CONSTITUTION: An interlayer oxide layer is formed on a substrate(31). The interlayer oxide layer is etched to form a contact hole through a photolithography process using a contact mask. A contact buried layer(37) having etch selectivity regarding the oxide layer is formed in the contact hole. The interlayer oxide layer is removed through a dip-out process so that the contact buried layer is removed or the interlayer oxide layer is left in the unopened contact hole to detect the unopened contact hole.