| 摘要 |
PURPOSE: A method for forming a trench of a semiconductor device is provided to be capable of preventing the generation of a micro-trench. CONSTITUTION: The first mask having the first opening portion, is formed at the upper portion of a semiconductor substrate(100a). An ion implantation process is carried out at the resultant structure by using the first mask. After sequentially forming the first and second pad layer(300a,400a) at the upper portion of the resultant structure, the second mask having the second opening portion, is formed at the upper portion of the second pad layer. At this time, the size of the second opening portion is larger than that of the first opening portion. A predetermined trench(600) is formed by carrying out a dry etching at the resultant structure. Preferably, the center portion of the trench is further etched than the sidewall portion.
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