发明名称 Contact structure for semiconductor lasers
摘要 An improved electrical contact structure can be manufactured by plating a component of a first material such as molybdenum with a second material such as copper or silver. The first and second materials are selected to provide a desired effective coefficient of thermal expansion (CTE) and electrical conductivity. The contact structure can be made very thin for implementations in which multiple lasers are to be stacked closely together. The manufacturing processing can be carried out very inexpensively by first etching the outline of multiple components in a sheet of the first material and then plating the etched sheet with the second material.
申请公布号 US6674775(B1) 申请公布日期 2004.01.06
申请号 US20000507598 申请日期 2000.02.18
申请人 JDS UNIPHASE CORP 发明人 DOHLE GOTTFRIED RAINER;WONG VINCENT V
分类号 H01S3/04;H01S5/00;H01S5/024;H01S5/042;H01S5/40;(IPC1-7):H01S5/00 主分类号 H01S3/04
代理机构 代理人
主权项
地址