| 摘要 |
PURPOSE: A platinum-CMP(Chemical Mechanical Polishing) solution is provided to be capable of improving the polishing speed of a platinum layer and reducing the dishing phenomenon of the platinum layer and the scratch phenomenon of an interlayer dielectric. CONSTITUTION: A platinum-CMP solution contains a potassium hydroxide aqueous solution and an oxidizing agent. Preferably, the potassium hydroxide aqueous solution is in the range of 0.01-10 M. Preferably, the potassium hydroxide aqueous solution is in the range of pH 8-14. Preferably, H2O2 is used as the oxidizing agent. Preferably, the oxidizing agent has concentration of 1-50 vol% in comparison to the potassium hydroxide aqueous solution. Preferably, the oxidizing agent has concentration of 1-10 vol% compared with the potassium hydroxide aqueous solution. |
