| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided to be capable of effectively controlling striation phenomenon for exactly controlling the CD(Critical Dimension) of the contact hole. CONSTITUTION: After forming a predetermined lower layer at the upper portion of a semiconductor substrate(201), an interlayer dielectric(202) is formed at the upper portion of the resultant structure. Then, a photoresist layer(203) is coated on the entire surface of the interlayer dielectric, a photoresist pattern is formed by selectively patterning the photoresist layer. A contact hole is formed at the inner portion of the interlayer dielectric by carrying out an etching process at the resultant structure using C4F8, O2, and CO gas as a main reaction gas. At this time, the photoresist pattern is used as an etching mask.
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