发明名称 MEMORY DEVICE WITH SENSE AMP EQUILIBRATION CIRCUIT
摘要 A device includes first and second data lines, a memory cell, a sense amp, equilibration circuitry, and sense amp equilibration circuitry. The memory cell is coupled to the first and second data lines. The sense amp is coupled to the data lines. The sense amp includes sensing circuitry configured to detect a voltage on the data lines corresponding to charge stored in the memory cell, a first activation line coupled between the sensing circuitry and a pullup voltage source, and a second activation line coupled between the sensing circuitry and a pulldown voltage source. The equilibration circuitry is configured to ground the first activation line and equilibrate the second activation line responsive to an assertion of an equilibrate signal. The sense amp equilibration circuitry is configured to equilibrate the first activation line responsive to an assertion of a sense amp equilibration signal prior to an activation of the second activation line.
申请公布号 US2003235102(A1) 申请公布日期 2003.12.25
申请号 US20020175271 申请日期 2002.06.19
申请人 JOO YANGSUNG 发明人 JOO YANGSUNG
分类号 G11C7/06;G11C7/12;(IPC1-7):G11C7/02 主分类号 G11C7/06
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