| 摘要 |
A semiconductor laser device (10) including a stacked structure. The stacked structure includes a first electrode (6a), a substrate (1) of first conduction type layered on the first electrode, a first cladding layer (2) of the first conduction type, an active layer (3), a second cladding layer (4) of second conduction type opposite to the first one, an insulating layer (5), and a second electrode (6b). The second cladding layer includes at least first and second portion having thickness different from each other. The first portion (8) is thicker than the second portion. The insulating layer is deposited on the second cladding layer except for the first portion. The second electrode is electrically connected to the first portion. In the insulating layer, a product of a reciprocal of a layer thickness and heat conductivity of the insulating layer is smaller than 4x10<8 >W/(m<2>K).
|
