Active well schemes for SOI technology

摘要

A semiconductor device fabricated on a silicon-on-insulator substrate and having an active well scheme as well as methods, including a non-self-aligned and self-aligned, of fabricating such a device are disclosed herein. The semiconductor device includes field effect transistor 124 comprising at least body region 127 and diffusion regions 132; buried interconnect plane 122 optionally self-aligned to diffusion regions 132 and in contact with body region 127; isolation oxide region 118 between diffusion regions 132 and buried interconnect plane 122; and buried oxide layer 104 present beneath buried interconnect plane 122.