| 摘要 |
The present invention provides a radiation detecting apparatus having a radiation conversion element laminated on a switch TFT, including: a gate electrode of the switch TFT; a first insulating layer, a first semiconductor layer, and an ohmic contact layer, which are laminated on the gate electrode in order; and a source/drain electrode of the switch TFT laminated on the ohmic contact layer, which all constitute the switch TFT; and a lower electrode of the radiation conversion element, which is formed on the same layer as the source/drain electrode; a second insulating layer, a second semiconductor layer, and a second ohmic contact layer, which are laminated on the lower electrode in order; and a bias wiring for applying a bias to the radiation conversion element. Also, the invention provides a radiation image pickup apparatus including: a photoelectric conversion element having a wavelength converter for converting a radiation into a visible light, a pixel electrode for converting the visible light into an electric signal, an insulating layer, and a semiconductor layer; and a transistor for controlling reading of the electric signal converted by the photoelectric conversion element, the photoelectric conversion element being laminated on the wavelength converter side of the transistor, the pixel electrode being divided for each of plural pixels, and the semiconductor layer extending over the plural pixels.
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