| 发明名称 |
Pre-LDD wet clean recipe to gain channel length scaling margin beyond sub-0.1 mum |
| 摘要 |
A method of cleaning a substrate before and after an LDD implantation comprising the following sequential steps. A substrate having a gate structure formed thereover is provided. The substrate is cleaned by a wet clean process including NH4OH. An LDD implantation is performed into the substrate to form LDD implants. The substrate is cleaned by a wet clean process excluding NH4OH.
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| 申请公布号 |
US6660635(B1) |
申请公布日期 |
2003.12.09 |
| 申请号 |
US20020101653 |
申请日期 |
2002.03.20 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
GUO JYH-CHYURN;WANG WU-DER |
| 分类号 |
H01L21/02;H01L21/265;H01L21/302;H01L21/306;H01L21/336;(IPC1-7):H01L21/302;H01L24/461 |
主分类号 |
H01L21/02 |
| 代理机构 |
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| 主权项 |
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