| 摘要 |
PURPOSE: A method for forming a gate of a semiconductor device is provided to prevent collapse of a gate structure by forming the gate using two-step etching processes. CONSTITUTION: A gate oxide layer(12) and a conductive layer(13) are sequentially formed on a semiconductor substrate(11). The conductive layer(13) is firstly etched by using a fluorine-based plasma. The remaining conductive layer(13) is secondly etched by using a chlorine-based plasma, thereby forming a gate. Mixed gases of SF6 and N2 are used as the fluorine-based plasma gas. Also, mixed gases of Cl2 and O2 are used as the chlorine-based plasma gas.
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