| 摘要 |
<p>Disclosed is a-Si TFT LCD device and manufacturing method thereof. Gate patterns having gate lines (112a-112f) and gate electrodes are formed on an insulation substrate (110) including display region and driving circuit region having shift registers. Gate insulating film (114) active layer patterns (118a-118d) and data patterns including source/drain electrodes are formed successively on the substrate. Passivation layer (130) are formed thereon, and has first contact hole (41) exposing the drain electrode of the display region, second and third contact holes (42, 43) respectively exposing gate and source/drain electrodes of a first transistor of each shift register. Electrode patterns (140, 142) are formed on the passivation layer (130), and include first electrode (140) connected to the drain electrode (118b) of display region, and second electrode connecting the gate electrode to the source/drain electrodes. A gate driving circuit including shift registers and wirings are integrated on the substrate, thereby simplifying the manufacturing process of the TFT-LCD device.</p> |
