发明名称 |
Memory manufacturing process using bitline rapid thermal anneal |
摘要 |
A method of manufacturing an integrated circuit includes providing a semiconductor substrate and depositing a charge-trapping dielectric layer and a gate dielectric layer over the semiconductor substrate. Bitlines are implanted closely in the semiconductor substrate and annealed using a rapid thermal anneal. Wordlines and gates are formed and source/drain junctions are implanted in the semiconductor substrate. An interlayer dielectric layer is deposited and the integrated circuit completed.
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申请公布号 |
US6653191(B1) |
申请公布日期 |
2003.11.25 |
申请号 |
US20020151576 |
申请日期 |
2002.05.16 |
申请人 |
ADVANCED MICRO DEVICES, INC.;FUJITSU LIMITED |
发明人 |
YANG JEAN Y.;HALLIYAL ARVIND;JAFARPOUR AMIR H.;KAMAL TAZRIEN;RAMSBEY MARK T.;LINGUNIS EMMANUIL;SHIRAIWA HIDEHIKO |
分类号 |
H01L21/8246;H01L27/105;H01L27/115;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/8246 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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