发明名称 |
Method of forming copper wire on semiconductor device |
摘要 |
Disclosed is a method of forming a copper wire on a semiconductor device capable of preventing the natural oxidation of copper. The method comprises the steps of: forming an insulation film pattern having vias and trenches on a semiconductor substrate; forming a copper wire by filling up the vias and the trenches with copper; successively forming a capping layer and a protective layer on the copper wire and the insulation film pattern; exposing the copper wire by selectively removing the capping layer and the protective layer; and forming an oxidation-prevention layer on the copper wire. According to the present invention, the natural oxidation of copper is avoided by selectively depositing aluminum on a copper wire pad, and therefore a dependable evaluation is possible from tests of reliability in a high temperature. Furthermore, since aluminum has a lower contact resistance compared with copper, dependable test results are obtained during tests of electrical characteristics.
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申请公布号 |
US2003216040(A1) |
申请公布日期 |
2003.11.20 |
申请号 |
US20020331428 |
申请日期 |
2002.12.30 |
申请人 |
LEE BYUNG ZU;KIM HYUN YONG |
发明人 |
LEE BYUNG ZU;KIM HYUN YONG |
分类号 |
H01L21/285;H01L21/768;(IPC1-7):H01L21/476;H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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地址 |
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