| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a transmission type phase shifting mask which enhances the intensity of light contributing to a phase shifting effect and can ensure a large focal depth and to provide a pattern forming method. <P>SOLUTION: Both a portion on which a resist is left (space portion 4) and a portion from which a resist is removed and in which a vacant pattern such as a contact hole or groove wiring is formed (hole pattern portion 3) are formed with a transparent glass substrate 1, the glass substrate 1 in the portion on which a resist is left is hollowed by etching to vary the thickness of the glass substrate 1 in such a way that the phase difference between the portion on which a resist is left and the portion from which a resist is removed becomes 180°, and when the pattern size of the portion from which a resist is removed is large, a metallic film of light shielding Cr 2 or the like is formed on the inside of a pattern in such a way that the distance from the edge becomes≤0.1μm. By such a constitution, the intensity of light contributing to a phase shifting effect is enhanced and a large focal depth can be ensured. <P>COPYRIGHT: (C)2004,JPO</p> |
