| 摘要 |
A semiconductor device includes a semiconductor substrate (1) on which a circuit element forming region and a plurality of connection pads (2, 2A, 2B) are formed, a first columnar electrode (6) which is formed on a first connection pad (2) so as to be electrically connected to the first connection pad, a first conductive layer (5-1) which is formed on a second connection pad (2A) so as to be electrically connected to the second connection pad, an encapsulating film (7) which is formed at least around the first columnar electrode, on the semiconductor substrate and on the first conductive layer, and a second conductive layer (8) which is formed on the encapsulating film (7) so as to face the first conductive layer. A passive element is formed from the first and second conductive layers (5-1, 8). <IMAGE> |
