Data bus architecture for integrated circuit devices having embedded dynamic random access memory (DRAM) with a large aspect ratio providing reduced capacitance and power requirements

摘要

A data bus architecture for integrated circuit embedded dynamic random access memory having a large aspect ratio serves to reduce power requirements in the data path through the use of multiple metal layers to reduce capacitance on the data busses. The memory is divided into multiple sections with data bussing in those sections routed in one metal, or conductive, layer. A different metal layer is used to route global data across these sections to a data register located on one edge of the memory. These global data lines are double data rate and single-ended which increases the physical spacing of these lines thereby reducing capacitance and power requirements. Each of the global data lines are routed to only one of the memory sections. This results in the average length of these lines being less than the length of the entire memory, which reduces the capacitance of the lines.