ATOMIC LAYER DEPOSITION METHOD OF SILICON OXIDE FILM USING HCD SOURCE

摘要

PURPOSE: A method for forming silicon oxide film to a high deposition rate at a low temperature using HCD (hexachloro disilane) and H2O sources and catalyst is provided. CONSTITUTION: The method for forming silicon oxide film is characterized in that atomic layer deposition process is performed using Si2Cl6 as a silicon source, wherein the process is performed at a temperature of 50 to 200 deg.C, wherein the process is performed under the existence of catalyst, wherein the catalyst is Lewis base, and wherein the catalyst is selected from the group consisting of pyridine, trimethylamine (TMA), triethylamine (TEA) and a mixture thereof. The method for forming silicon oxide film comprises a step (a) of exposing a semiconductor substrate having -OH group thereon to first catalyst for activating -H group; a step (b) of performing reaction of the following reaction formula 3 by exposing the resulting surface to Si2Cl6 (hexachloro disilane); a step (c) of exposing the resulting surface to second catalyst for activating -Cl group; and a step (d) of performing reaction of the following reaction formula 4 by exposing the resulting surface to H2O:£Reaction Formula 3|: (-OH¬+) + (Si2Cl6) → (-O-Si2Cl5) / (-O-Si2Cl4) + (HCl), £Reaction Formula 4|: (-O-Si-Cl¬-) + (H2O) → (-O-Si-OH) + (HCl).