发明名称 |
Method of forming a shallow trench isolation structure |
摘要 |
A method for reducing preferential chemical mechanical polishing (CMP) of a silicon oxide filled shallow trench isolation (STI) feature during an STI formation process including providing a semiconductor wafer having a process surface including active areas for forming semiconductor devices thereon; forming a silicon oxynitride layer over the process surface for photolithographically patterning STI trenches around the active areas; photolithographically patterning STI trenches around the active areas for anisotropic etching; anisotropically etching the STI trenches extending through the silicon oxynitride layer into the semiconductor wafer; depositing a silicon oxide layer over the silicon oxynitride layer to include filling the STI trenches; and, performing a CMP process to remove the silicon oxide layer overlying the silicon oxynitride layer to reveal an upper surface of the silicon oxynitride layer.
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申请公布号 |
US2003203515(A1) |
申请公布日期 |
2003.10.30 |
申请号 |
US20020134950 |
申请日期 |
2002.04.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN KENG-CHU;WU CHIH-TA |
分类号 |
H01L21/3105;H01L21/314;H01L21/316;H01L21/762;(IPC1-7):H01L21/00;H01L21/302;H01L21/311;H01L21/461;H01L21/76 |
主分类号 |
H01L21/3105 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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